Dipolar Alignment in a Ferroelectric Dielectric Layer of FeFETs to Boost Charge Mobility and Nonvolatile Memory-Reference-Cited by-同舟云学术

Dipolar Alignment in a Ferroelectric Dielectric Layer of FeFETs to Boost Charge Mobility and Nonvolatile Memory

Published:2020-09-20 Issue:10 Volume:2 Page:3187-3198
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Roy Dhrubojyoti¹^ORCID,Gooh Pattader Partho Sarathi¹^ORCID,Bandyopadhyay Dipankar¹^ORCID,Chakraborty Mohua²,Wang Chia-Hsin³,Yang Yaw-Wen³⁴,Mukherjee Manabendra⁵^ORCID

Affiliation:

1. Department of Chemical Engineering, Indian Institute of Technology Guwahati, Guwahati 781039, India

2. Department of Chemical Sciences, Indian Institute of Science Education and Research Kolkata, Mohanpur 741246, India

3. National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan

4. Department of Chemistry, National Tsing-Hua University, Hsinchu 30013, Taiwan

5. Saha Institute of Nuclear Physics, 1/AF, Bidhannagar, Kolkata 700064, India

Funder

Ministry of Electronics and Information technology

Indian Institute of Technology Guwahati

Science and Engineering Research Board

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00549

Reference69 articles.

1. High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics

2. PVDF-Based Ferroelectric Polymers in Modern Flexible Electronics

3. Ferroelectric Polymers

4. Revisiting the δ-phase of poly(vinylidene fluoride) for solution-processed ferroelectric thin films

5. Direct-Write Piezoelectric Polymeric Nanogenerator with High Energy Conversion Efficiency

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