Spin-Gapless Semiconductors and Quantum Anomalous Hall Effects of Tetraazanaphthotetraphene-Based Two-Dimensional Transition-Metal Organic Frameworks on Spintronics and Electrocatalysts for CO<sub>2</sub> Reduction-Reference-Cited by-同舟云学术

Spin-Gapless Semiconductors and Quantum Anomalous Hall Effects of Tetraazanaphthotetraphene-Based Two-Dimensional Transition-Metal Organic Frameworks on Spintronics and Electrocatalysts for CO₂ Reduction

Published:2023-02-07 Issue:2 Volume:5 Page:1243-1251
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Wang Yue¹,Jiang Jiawei¹,Zou Ji-Jun²^ORCID,Mi Wenbo¹^ORCID

Affiliation:

1. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China

2. Key Laboratory for Green Chemical Technology of the Ministry of Education, School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, China

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01694

Reference65 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Valley-dependent topological phase transition and quantum anomalous valley Hall effect in single-layer RuClBr

3. Effect of Amidogen Functionalization on Quantum Spin Hall Effect in Bi/Sb(111) Films