Direct Epitaxial Growth of Polar (1 – x)HfO2–(x)ZrO2 Ultrathin Films on Silicon-Reference-Cited by-同舟云学术

Direct Epitaxial Growth of Polar (1 – x)HfO2–(x)ZrO2 Ultrathin Films on Silicon

Published:2019-11-25 Issue:12 Volume:1 Page:2585-2593
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Nukala Pavan¹,Antoja-Lleonart Jordi¹,Wei Yingfen¹,Yedra Lluis²³,Dkhil Brahim²,Noheda Beatriz¹^ORCID

Affiliation:

1. Zernike Institute of Advanced Materials, University of Groningen, Groningen 9747 AG, The Netherlands

2. Laboratoire Structures, Propriétés et Modélisation des Solides, CentraleSupélec, CNRS UMR 8580, Université Paris-Saclay, 91190 Gif-sur-Yvette, France

3. Laboratoire Mécanique des Sols, Structures et Matériaux, CentraleSupélec, CNRS UMR 8579, Université Paris-Saclay, 91190 Gif-sur-Yvette, France

Funder

Agence Nationale de la Recherche

H2020 Marie Sklodowska-Curie Actions

China Scholarship Council

Nederlandse Organisatie voor Wetenschappelijk Onderzoek

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

http://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00585

Reference63 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Review and perspective on ferroelectric HfO2-based thin films for memory applications

3. Ferroelectric deep trench capacitors based on Al:HfO2 for 3D nonvolatile memory applications

4. Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO2

Cited by 55 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physical origin of hafnium-based ferroelectricity;Computational Materials Today;2024-12

2. Phase Stability and Phase Transition Pathways in the Rhombohedral Phase of HfO₂;The Journal of Physical Chemistry Letters;2024-09-05

3. Hafnium Oxide-Based Ferroelectric Devices for In-Memory Computing: Resistive and Capacitive Approaches;ACS Applied Electronic Materials;2024-08-16

4. First‐Principles Calculation of Basic Properties of Rhombohedral Hafnium Oxide with Space Group R3;physica status solidi (b);2024-06-08

5. Remote epitaxy-based atmospherically stable hybrid graphene template for fast and versatile transfer of complex ferroelectric oxides onto Si;Materials Today Electronics;2024-06