Improving the GeAsSe Ovonic Threshold Switching Characteristics by Carbon Buffer Layers for Ultralow Leakage Current (∼0.4 nA) and Low Drift Characteristics-Reference-Cited by-同舟云学术

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Improving the GeAsSe Ovonic Threshold Switching Characteristics by Carbon Buffer Layers for Ultralow Leakage Current (∼0.4 nA) and Low Drift Characteristics

Published:2023-05-31 Issue:6 Volume:5 Page:3499-3506
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Li Xiaodan¹²^ORCID,Yuan Zhenhui¹²^ORCID,Xue Yuan¹²^ORCID,Zhu Yulai¹^ORCID,Song Sannian¹²^ORCID,Song Zhitang¹²

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Funder

Science and Technology Commission of Shanghai Municipality

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00516

Reference43 articles.

1. Overview and outlook of emerging non-volatile memories

2. Access devices for 3D crosspoint memory

3. Ultrahigh drive current and large selectivity in GeS selector

4. Effect of Ge Concentration in GexSe1-x Chalcogenide Glass on the Electronic Structures and the Characteristics of Ovonic Threshold Switching (OTS) Devices

5. Deep machine learning unravels the structural origin of mid‐gap states in chalcogenide glass for high‐density memory integration

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1. Evidence of Heat‐Assisted Atomic Migration in GeSe Self‐Selecting Memory at High Operating Current Density;physica status solidi (RRL) – Rapid Research Letters;2024-01-19

2. Leveraging volatile memristors in neuromorphic computing: from materials to system implementation;Materials Horizons;2024

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