Effect of Ge Concentration in GexSe1-x Chalcogenide Glass on the Electronic Structures and the Characteristics of Ovonic Threshold Switching (OTS) Devices-Reference-Cited by-同舟云学术

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Effect of Ge Concentration in GexSe1-x Chalcogenide Glass on the Electronic Structures and the Characteristics of Ovonic Threshold Switching (OTS) Devices

Published:2013-07-18 Issue:10 Volume:2 Page:Q75-Q77
ISSN:2162-8742
Container-title:ECS Solid State Letters
language:en
Short-container-title:ECS Solid State Letters

Author:

Kim S.-D.,Ahn H.-W.,Shin S. y.,Jeong D. S.,Son S. H.,Lee H.,Cheong B.-k.,Shin D. W.,Lee S.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 38 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Stochastic artificial neuron based on Ovonic Threshold Switch (OTS) and its applications for Restricted Boltzmann Machine (RBM);Chaos, Solitons & Fractals;2024-09

2. GeSe ovonic threshold switch: the impact of functional layer thickness and device size;Scientific Reports;2024-03-20

3. Ultrafast and thermally stable ternary Ge0.33SexSy ovonic threshold switching selector using magnetron sputtering;Journal of Alloys and Compounds;2024-02

4. Chalcogenide Ovonic Threshold Switching Selector;Nano-Micro Letters;2024-01-11

5. Structure, bonding and electronic characteristics of amorphous Se;Physical Chemistry Chemical Physics;2024

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