Deep machine learning unravels the structural origin of mid‐gap states in chalcogenide glass for high‐density memory integration-Reference-Cited by-同舟云学术

Deep machine learning unravels the structural origin of mid‐gap states in chalcogenide glass for high‐density memory integration

Published:2022-04-13 Issue:6 Volume:4 Page:
ISSN:2567-3165
Container-title:InfoMat
language:en
Short-container-title:InfoMat

Author:

Xu Meng¹,Xu Ming¹²^ORCID,Miao Xiangshui¹²^ORCID

Affiliation:

1. Wuhan National Laboratory for Optoelectronics School of Integrated Circuits & School of Optical and Electronic Information, Huazhong University of Science and Technology Wuhan China

2. Hubei Yangtze Memory Laboratories Wuhan China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

General Medicine

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/inf2.12315

Reference76 articles.

1. Nanomaterials for optical data storage

2. Nanoionics-based resistive switching memories

3. A new spin on magnetic memories

4. Ferroelectric Memories

5. High‐Throughput Screening for Phase‐Change Memory Materials

Cited by 52 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nitrogen: A promising doping strategy for high-performance ovonic threshold switching selectors;Journal of Alloys and Compounds;2024-11

2. Multi-layer heterojunction phase change thin films with extremely low resistance drift;Ceramics International;2024-08

3. Revealing the Structure/Property Relationships of Semiconductor Nanomaterials via Transmission Electron Microscopy;Advanced Functional Materials;2024-07-06

4. Study on Resistance of Crystalline GeTe Thin Films and Enhancement on Electrical Properties of Phase Change Switch;IEEE Transactions on Electron Devices;2024-07

5. Dual-phase coexistence enables to alleviate resistance drift in phase-change films;Journal of Semiconductors;2024-07-01