Investigation of Optimal Architecture of MoS2 Channel Field-Effect Transistors on a Sub-2 nm Process Node
Author:
Affiliation:
1. Department of Electrical and Electronics Engineering, Konkuk University, Seoul 05029, Republic of Korea
2. Data and Information Tech. (DIT) Center, Samsung Electronics, Hwasung-Si 18448, Republic of Korea
Funder
Samsung
National Research Foundation of Korea
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00096
Reference38 articles.
1. Cramming More Components Onto Integrated Circuits
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