Integrated 1D epitaxial mirror twin boundaries for ultrascaled 2D MoS2 field-effect transistors-Reference-Cited by-同舟云学术

Integrated 1D epitaxial mirror twin boundaries for ultrascaled 2D MoS2 field-effect transistors

Published:2024-07 Issue:7 Volume:19 Page:955-961
ISSN:1748-3387
Container-title:Nature Nanotechnology
language:en
Short-container-title:Nat. Nanotechnol.

Author:

Ahn Heonsu,Moon Gunho,Jung Hang-gyo,Deng Bingchen^ORCID,Yang Dong-Hwan,Yang Sera,Han Cheolhee^ORCID,Cho Hyunje,Yeo Youngki,Kim Cheol-Joo^ORCID,Yang Chan-Ho^ORCID,Kim Jonghwan^ORCID,Choi Si-Young^ORCID,Park Hongkun^ORCID,Jeon Jongwook^ORCID,Park Jin-Hong^ORCID,Jo Moon-Ho^ORCID

Publisher

Springer Science and Business Media LLC

Link

https://www.nature.com/articles/s41565-024-01706-1.pdf

Reference42 articles.

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2. Heo, H. et al. Interlayer orientation-dependent light absorption and emission in monolayer semiconductor stacks. Nat. Commun. 6, 7372 (2015).

3. Sung, J. H. et al. Coplanar semiconductor–metal circuitry defined on few-layer MoTe2 via polymorphic heteroepitaxy. Nat. Nanotechnol. 12, 1064–1070 (2017).

4. Jin, G. et al. Atomically thin three-dimensional membranes of van der Waals semiconductors by wafer-scale growth. Sci. Adv. 5, eaaw3180 (2019).

5. Lee, C.-S. et al. Programmed band gap modulation within van der Waals semiconductor monolayers by metalorganic vapor-phase epitaxy. Chem. Mater. 32, 5084–5090 (2020).

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1. 1D metals for 2D electronics;Nature Nanotechnology;2024-07