Rotation-Misfit-Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition-Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls-Reference-Cited by-同舟云学术

Rotation-Misfit-Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition-Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls

Published:2015-05-22 Issue:25 Volume:27 Page:3803-3810
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Heo Hoseok¹²,Sung Ji Ho¹²,Jin Gangtae¹³,Ahn Ji-Hoon¹,Kim Kyungwook¹³,Lee Myoung-Jae¹,Cha Soonyoung⁴,Choi Hyunyong⁴,Jo Moon-Ho¹²³

Affiliation:

1. Center for Artificial Low Dimensional Electronic Systems; Institute for Basic Science (IBS); 77 Cheongam-Ro Pohang 790-784 Korea

2. Division of Advanced Materials Science; Pohang University of Science and Technology (POSTECH); 77 Cheongam-Ro Pohang 790-784 Korea

3. Department of Materials Science and Engineering; Pohang University of Science and Technology (POSTECH); 77 Cheongam-Ro Pohang 790-784 Korea

4. School of Electrical and Electronic Engineering; Yonsei University; 50 Yonsei-ro Seodaemun-gu Seoul 120-749 Korea

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference46 articles.

1. Single-layer MoS2 transistors

2. Atomically ThinMoS2: A New Direct-Gap Semiconductor

3. Ultrasensitive photodetectors based on monolayer MoS2

4. The valley Hall effect in MoS 2 transistors

5. Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films

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