Stacked Top Gate Dielectrics in Dual Gate Ion Sensitive Field Effect Transistors: Role of Interfaces-Reference-Cited by-同舟云学术

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Stacked Top Gate Dielectrics in Dual Gate Ion Sensitive Field Effect Transistors: Role of Interfaces

Published:2019-07-11 Issue:8 Volume:1 Page:1465-1473
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Bhatt Deepa¹²,Kumar Narendra²,Panda Siddhartha¹²³⁴^ORCID

Affiliation:

1. Materials Science Programme, Indian Institute of Technology Kanpur, Kanpur 208016, India

2. Samtel Centre for Display Technologies, Indian Institute of Technology Kanpur, Kanpur 208016, India

3. Department of Chemical Engineering, Indian Institute of Technology Kanpur, Kanpur 208016, India

4. National Centre for Flexible Electronics, Indian Institute of Technology Kanpur, Kanpur 208016, India

Funder

Ministry of Electronics and Information technology

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00267

Reference43 articles.

1. Glucose Sensing Using Functionalized Amorphous In–Ga–Zn–O Field-Effect Transistors

2. Extended-gate-type IGZO electric-double-layer TFT immunosensor with high sensitivity and low operation voltage

3. ZnO thin film transistor immunosensor with high sensitivity and selectivity

4. Performance Enhancement of Capacitive-Coupling Dual-gate Ion-Sensitive Field-Effect Transistor in Ultra-Thin-Body

5. Bottom-gate amorphous InGaZnO4thin-film transistor pH sensors utilizing top-gate effects

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3. ISFET‐based sensors for (bio)chemical applications: A review;Electrochemical Science Advances;2022-03-14

4. Dual‐gate ion‐sensitive field‐effect transistors: A review;Electrochemical Science Advances;2021-12-16

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