Extended-gate-type IGZO electric-double-layer TFT immunosensor with high sensitivity and low operation voltage-Reference-Cited by-同舟云学术

Extended-gate-type IGZO electric-double-layer TFT immunosensor with high sensitivity and low operation voltage

Published:2016-10-24 Issue:17 Volume:109 Page:173501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liang Lingyan¹^ORCID,Zhang Shengnan¹,Wu Weihua¹²,Zhu Liqiang¹,Xiao Hui¹,Liu Yanghui¹,Zhang Hongliang¹,Javaid Kashif¹³,Cao Hongtao¹

Affiliation:

1. Key Laboratory of Additive Manufacturing Materials of Zhejiang Province and Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China

2. Institute of Materials Science, School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China

3. Department of Physics, Government College University Faisalabad, Allama Iqbal Road, 38000 Faisalabad, Pakistan

Funder

National key Research and Development Program of China

Ningbo Municipal Science and Technology innovative research team

National Natural Science Foundation of China (NSFC)

Natural Science Foundation of Zhejiang Province (Zhejiang Provincial Natural Science Foundation)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4966221

Reference20 articles.

1. The evolution and developments of immunosensors for health and environmental monitoring: problems and perspectives

2. A Label-Free Immunosensor for IgG Based on an Extended-Gate Type Organic Field Effect Transistor

3. Electrolyte-Gated Organic Field-Effect Transistor Sensors Based on Supported Biotinylated Phospholipid Bilayer

4. ZnO thin film transistor immunosensor with high sensitivity and selectivity

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