Controlled Construction of Atomic Point Contact with 16 Quantized Conductance States in Oxide Resistive Switching Memory

Author:

Chen Qilai1234,Liu Gang23ORCID,Xue Wuhong2,Shang Jie2,Gao Shuang2,Yi Xiaohui2,Lu Ying2,Chen Xinhui2,Tang Minghua4,Zheng Xuejun1,Li Run-Wei2ORCID

Affiliation:

1. School of Mechanical Engineering, Xiangtan University, Xiangtan, Hunan 411105, People’s Republic of China

2. CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, People’s Republic of China

3. School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People’s Republic of China

4. School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105, People’s Republic of China

Funder

Ministry of Science and Technology of the People's Republic of China

Natural Science Foundation of?Hunan Province

Ministry of Education of the People's Republic of China

Changjiang Scholar Program of Chinese Ministry of Education

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

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