Controlled Construction of Atomic Point Contact with 16 Quantized Conductance States in Oxide Resistive Switching Memory-Reference-Cited by-同舟云学术

Controlled Construction of Atomic Point Contact with 16 Quantized Conductance States in Oxide Resistive Switching Memory

Published:2019-04-24 Issue:5 Volume:1 Page:789-798
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Chen Qilai¹²³⁴,Liu Gang²³^ORCID,Xue Wuhong²,Shang Jie²,Gao Shuang²,Yi Xiaohui²,Lu Ying²,Chen Xinhui²,Tang Minghua⁴,Zheng Xuejun¹,Li Run-Wei²^ORCID

Affiliation:

1. School of Mechanical Engineering, Xiangtan University, Xiangtan, Hunan 411105, People’s Republic of China

2. CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, People’s Republic of China

3. School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People’s Republic of China

4. School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105, People’s Republic of China

Funder

Ministry of Science and Technology of the People's Republic of China

Natural Science Foundation of?Hunan Province

Ministry of Education of the People's Republic of China

Changjiang Scholar Program of Chinese Ministry of Education

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00191

Reference70 articles.

1. The chips are down for Moore’s law

2. Moore's law: past, present and future

3. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

4. A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View

5. Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

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