Growth Window of Ferroelectric Epitaxial Hf0.5Zr0.5O2 Thin Films
Author:
Affiliation:
1. Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193 Barcelona, Spain
Funder
European Regional Development Fund
Ministerio de Econom?a y Competitividad
Generalitat de Catalunya
China Scholarship Council
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.8b00065
Reference38 articles.
1. Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
2. Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects
3. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films
4. Ferroelectricity in hafnium oxide thin films
5. Polarization switching behavior of Hf–Zr–O ferroelectric ultrathin films studied through coercive field characteristics
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