Electrical uniformity analyses on 12-inch Si-based Hf0.5Zr0.5O2 ferroelectric capacitor devices by atomic layer deposition-Reference-Cited by-同舟云学术

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Electrical uniformity analyses on 12-inch Si-based Hf0.5Zr0.5O2 ferroelectric capacitor devices by atomic layer deposition

Published:2024-06 Issue:3 Volume:34 Page:598-605
ISSN:1002-0071
Container-title:Progress in Natural Science: Materials International
language:en
Short-container-title:Progress in Natural Science: Materials International

Author:

Ding Wen-Juan,Liu Yu,Xiao Zhi-Qiang,Gao Li,Li Yu-Chen,Zhu Lin,Li Xiang,Li Wei-Min^ORCID,Chen Shuang^ORCID,Li Ai-Dong

Funder

Transformation Program of Scientific and Technological Achievements of Jiangsu Province

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference33 articles.

1. Growth and ferroelectric properties of sol-gel derived PZT thin films using inorganic Zr precursor;Shao;Mater. Lett.,2001

2. Effects of processing on the characteristics of SrBi2Ta2O9 films prepared by metalorganic decomposition;Li;Appl. Phys.,2000

3. Ferroelectric Hf0.5Zr0.5O2 thin films: a review of recent advances;Kim;J. Occup. Med.,2019

4. Roadmap on ferroelectric hafnia-and zirconia-based materials and devices;Silva;Apl. Mater.,2023

5. Ferroelectricity in yttrium-doped hafnium oxide;Müller;J. Appl. Phys.,2011

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