Self-Pixelation Through Fracture in VO2 Thin Films-Reference-Cited by-同舟云学术

Self-Pixelation Through Fracture in VO2 Thin Films

Published:2020-04-19 Issue:5 Volume:2 Page:1433-1439
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Rodríguez Laura¹²^ORCID,del Corro Elena¹,Conroy Michele³,Moore Kalani³,Sandiumenge Felip⁴,Domingo Neus¹^ORCID,Santiso José¹,Catalan Gustau¹⁵

Affiliation:

1. Institut Català de Nanociència i Nanotecnologia (ICN2), CSIC and The Barcelona Institute of Nanoscience and Technology (BIST), Campus UAB, 08193 Barcelona, Catalonia, Spain

2. Departament de Física Aplicada, Facultat de Física, Universitat de Barcelona (UB), 08028 Barcelona, Catalonia, Spain

3. TEMUL, Department of Physics, School of Natural Sciences & Bernal Institute, University of Limerick, AD3-009 Limerick, Ireland

4. Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus de la UAB, 08193 Barcelona, Catalonia, Spain

5. ICREA—Institució Catalana de Recerca i Estudis Avançats, 08010 Barcelona, Catalonia

Funder

Ministerio de Econom?a, Industria y Competitividad, Gobierno de Espa?a

Science Foundation Ireland

Ministerio de Econom?a y Competitividad

Ag?ncia de Gesti? d'Ajuts Universitaris i de Recerca

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00199

Reference45 articles.

1. Electronic Properties of VO2near the Semiconductor-Metal Transition

2. Electrical switching and Mott transition in VO2

3. Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions

4. Terahertz-field-induced insulator-to-metal transition in vanadium dioxide metamaterial

5. Control of the metal–insulator transition in vanadium dioxide by modifying orbital occupancy

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