Quantum Transport of Sub-10 nm Monolayer WGe2N4 Transistors-Reference-Cited by-同舟云学术

Quantum Transport of Sub-10 nm Monolayer WGe2N4 Transistors

Published:2021-10-28 Issue:11 Volume:3 Page:5086-5094
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Zhao Huiqin¹,Yang Guofeng¹^ORCID,Liu Yushen²^ORCID,Yang Xifeng²,Gu Yan¹,Wei Chunlei³,Xie Zhijian⁴,Zhang Qi⁴,Bian Baoan¹,Zhang Xiumei¹,Huo Xinxia¹,Lu Naiyan¹

Affiliation:

1. School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China

2. School of Electronic and Information Engineering, Suzhou Key Laboratory of Advanced Lighting and Display Technologies, Changshu Institute of Technology, Changshu 215556, China

3. Lumisource Technologies Co., Ltd., Wuxi 214192, China

4. Jiangsu Xinguanglian Technology Co., Ltd., Wuxi 214192, China

Funder

Jiangsu Provincial Key Research and Development Program

Ministry of Education of the People's Republic of China

Natural Science Foundation of Jiangsu Province

National Natural Science Foundation of China

Postgraduate Research & Practice Innovation Program of Jiangsu Province

Suzhou Science and Technology Project

the Science and Technology Development Foundation of Wuxi

Publisher

American Chemical Society (ACS)