Highly Stable Oxide Thin-Film Transistor-Based Complementary Logic Circuits under X-ray Irradiation-Reference-Cited by-同舟云学术

Highly Stable Oxide Thin-Film Transistor-Based Complementary Logic Circuits under X-ray Irradiation

Published:2022-07-07 Issue:7 Volume:4 Page:3606-3614
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Yatsu Kie¹,Lee Hyun-Ah¹,Kim Dae Hwan²^ORCID,Park Ick-Joon³^ORCID,Kwon Hyuck-In¹^ORCID

Affiliation:

1. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea

2. School of Electrical Engineering, Kookmin University, Seoul 02707, Korea

3. Department of Electrical and Electronic Engineering, Joongbu University, Goyang 10279, Korea

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c00565

Reference63 articles.

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