Machine-Learned Fermi Level Prediction of Solution-Processed Ultrawide-Bandgap Amorphous Gallium Oxide (a-Ga<sub>2</sub>O<sub><i>x</i></sub>)-Reference-Cited by-同舟云学术

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Machine-Learned Fermi Level Prediction of Solution-Processed Ultrawide-Bandgap Amorphous Gallium Oxide (a-Ga₂O_x)

Published:2022-11-25 Issue:12 Volume:4 Page:5838-5846
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Purnawati Diki¹,Regonia Paul Rossener²³,Bermundo Juan Paolo¹⁴^ORCID,Ikeda Kazushi²⁴,Uraoka Yukiharu¹⁴

Affiliation:

1. Division of Materials Science, Nara Institute of Science and Technology, Nara 630-0192, Japan

2. Division of Information Science, Nara Institute of Science and Technology, Nara 630-0192, Japan

3. Department of Computer Science, University of the Philippines Diliman, Quezon City 1101, Philippines

4. Data Science Center, Nara Institute of Science and Technology, Nara 630-0192, Japan

Funder

Nara Institute of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01013

Reference37 articles.

1. Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

2. Enhancing the Photoelectric Performance of Photodetectors Based on Metal Oxide Semiconductors by Charge-Carrier Engineering

3. An Ultrahigh Responsivity (9.7 mA W −1 ) Self‐Powered Solar‐Blind Photodetector Based on Individual ZnO–Ga 2 O 3 Heterostructures

4. High Responsivity and High Rejection Ratio of Self-Powered Solar-Blind Ultraviolet Photodetector Based on PEDOT:PSS/β-Ga2O3 Organic/Inorganic p–n Junction

5. Recent Progress of Deep Ultraviolet Photodetectors using Amorphous Gallium Oxide Thin Films

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