THz Thin Film Varactor Based on Integrated Ferroelectric HfZrO2
Author:
Affiliation:
1. Center Nanoelectronic Technologies, Fraunhofer IPMS, 01109Dresden, Germany
2. Institute of Solid State Electronics, TU Dresden, 01067Dresden, Germany
Funder
Fraunhofer-Gesellschaft
Electronic Components and Systems for European Leadership
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01273
Reference26 articles.
1. Ferroelectricity in hafnium oxide thin films
2. Mart, C.; Abdulazhanov, S.; Czernohorsky, M.; Kämpfe, T.; Lehninger, D.; Falidas, K.; Eslinger, S.; Kuhnel, K.; Oehler, S.; Rudolph, M.; Wiatr, M.; Kolodinski, S.; Seidel, R.; Weinreich, W.; Eng, L. M. Energy Harvesting in the Back-End of Line with CMOS Compatible Ferroelectric Hafnium Oxide 2020 IEEE International Electron Devices Meeting (IEDM); 12122020; pp 26.3.1–26.3.4.
3. Tunability of Ferroelectric Hafnium Zirconium Oxide for Varactor Applications
4. Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation
5. Extraordinary tunability of high-frequency devices using Hf0.3Zr0.7O2ferroelectric at very low applied voltages
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