Extraordinary tunability of high-frequency devices using Hf0.3Zr0.7O2ferroelectric at very low applied voltages
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4978032
Reference13 articles.
1. Ferroelectricity in hafnium oxide thin films
2. Ferroelectricity in Simple Binary ZrO2 and HfO2
3. Hafnium Oxide Based CMOS Compatible Ferroelectric Materials
4. Ferroelectric HfO2-based materials for next-generation ferroelectric memories
5. Low-Voltage Steep Turn-On pMOSFET Using Ferroelectric High-$\kappa$ Gate Dielectric
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