Domain Wall Movement in Undoped Ferroelectric HfO<sub>2</sub>: A Rayleigh Analysis-Reference-Cited by-同舟云学术

Domain Wall Movement in Undoped Ferroelectric HfO₂: A Rayleigh Analysis

Published:2023-05-23 Issue:6 Volume:5 Page:3251-3260
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Marquardt Richard¹^ORCID,Petersen Deik²,Gronenberg Ole³,Zahari Finn¹,Lamprecht Rouven¹,Popkirov George⁴,Carstensen Jürgen²,Kienle Lorenz³,Kohlstedt Hermann¹

Affiliation:

1. Nanoelectronics, Faculty of Engineering, Kiel University, 24143 Kiel, Germany

2. Chair of Functional Nanomaterials, Faculty of Engineering, Kiel University, 24143 Kiel, Germany

3. Synthesis and Real Structure Group, Faculty of Engineering, Kiel University, 24143 Kiel, Germany

4. Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 1784 Sofia, Bulgaria

Funder

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00336

Reference68 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Ferroelectric HfO2-based materials for next-generation ferroelectric memories

3. Review and perspective on ferroelectric HfO2-based thin films for memory applications

4. One Nanometer HfO 2 ‐Based Ferroelectric Tunnel Junctions on Silicon

5. Ferroelectrics Based on HfO2 Film

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