One Nanometer HfO 2 ‐Based Ferroelectric Tunnel Junctions on Silicon-Reference-Cited by-同舟云学术

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One Nanometer HfO 2 ‐Based Ferroelectric Tunnel Junctions on Silicon

Published:2021-09-29 Issue: Volume: Page:2100499
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Cheema Suraj S.¹^ORCID,Shanker Nirmaan²^ORCID,Hsu Cheng‐Hsiang²^ORCID,Datar Adhiraj²,Bae Jongho²^ORCID,Kwon Daewoong²,Salahuddin Sayeef²³^ORCID

Affiliation:

1. Department of Materials Science and Engineering University of California Berkeley CA 94720 USA

2. Department of Electrical Engineering and Computer Sciences University of California Berkeley CA 94720 USA

3. Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley CA 94720 USA

Funder

Defense Advanced Research Projects Agency

Semiconductor Research Corporation

Office of Science

Basic Energy Sciences

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100499

Reference77 articles.

1. The Past, the Present, and the Future of Ferroelectric Memories

2. The future of ferroelectric field-effect transistor technology

3. Physics of thin-film ferroelectric oxides

4. Gate Oxides Beyond SiO2

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1. Ferroelectric tunnel junctions based on a HfO2/dielectric composite barrier;Applied Physics Letters;2024-09-09

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3. Hafnium Oxide-Based Ferroelectric Devices for In-Memory Computing: Resistive and Capacitive Approaches;ACS Applied Electronic Materials;2024-08-16

4. Characterization of a Temperature-Sensitive Nano Piezoelectric Mechanical Resonator With a 20nm Free-Standing Hf_0.5Zr_0.5O₂ Membrane;Journal of Microelectromechanical Systems;2024-08

5. Strain Control of (001)-Polar-Axis-Oriented Epitaxial Y-Doped HfO₂ Thin Films;ACS Applied Electronic Materials;2024-07-25

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