Excess Random Laser Action in Memories for Hybrid Optical/Electric Logic-Reference-Cited by-同舟云学术

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Excess Random Laser Action in Memories for Hybrid Optical/Electric Logic

Published:2020-03-19 Issue:4 Volume:2 Page:954-961
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Cheng Yu-Ting¹,Su Chen-You¹^ORCID,Lin Hsia-Yu¹^ORCID,Liao Yu-Ming¹^ORCID,Shen Tien-Lin¹,Hu Han-Wen¹^ORCID,Chen Yang-Fang¹^ORCID

Affiliation:

1. Department of Physics, National Taiwan University, Taipei 106, Taiwan

Funder

Ministry of Education

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00013

Reference37 articles.

1. Electrochemical metallization memories—fundamentals, applications, prospects

2. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

3. Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

4. Polymer-Based Resistive Memory Materials and Devices

5. Metal–Oxide RRAM

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1. Stable and repeatable ZrO2 RRAM achieved by NiO barrier layer for negative set phenomenon elimination;Solid-State Electronics;2024-07

2. Stable and Repeatable Zro2 Rram Achieved by Nio Barrier Layer for Negative Set Phenomenon Elimination;2023

3. Recent progress and prospects of random lasers using advanced materials;Materials Advances;2022

4. Bioresistive Random-Access Memory with Gold Nanoparticles that Generate the Coulomb Blocking Effect Can Realize Multilevel Data Storage and Synapse Simulation;The Journal of Physical Chemistry Letters;2021-09-10

5. Recent advances in optical and optoelectronic data storage based on luminescent nanomaterials;Nanoscale;2020

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