Contact Engineering for Dual-Gate MoS2 Transistors Using O2 Plasma Exposure-Reference-Cited by-同舟云学术

Contact Engineering for Dual-Gate MoS2 Transistors Using O2 Plasma Exposure

Published:2019-01-17 Issue:2 Volume:1 Page:210-219
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Bolshakov Pavel¹,Smyth Christopher M.¹,Khosravi Ava¹,Zhao Peng¹^ORCID,Hurley Paul K.²,Hinkle Christopher L.¹^ORCID,Wallace Robert M.¹^ORCID,Young Chadwin D.¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, United States

2. Tyndall National Institute, University College Cork, Lee Maltings Complex, Dyke Parade, Mardyke, Cork, Ireland

Funder

National Institute of Standards and Technology

Science Foundation Ireland

Semiconductor Research Corporation

Division of Electrical, Communications and Cyber Systems

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.8b00059

Reference69 articles.

1. Toward Low-Power Electronics: Tunneling Phenomena in Transition Metal Dichalcogenides

2. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

3. Single-layer MoS2 transistors

4. Channel Length Scaling of MoS2MOSFETs

5. Single Atomically Sharp Lateral Monolayer p-n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency

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