Abnormal Threshold Voltage Shift and Sub-channel Generation in Top-Gate InGaZnO TFTs under Backlight Negative Bias Illumination Stress-Reference-Cited by-同舟云学术

Abnormal Threshold Voltage Shift and Sub-channel Generation in Top-Gate InGaZnO TFTs under Backlight Negative Bias Illumination Stress

Published:2023-01-24 Issue:2 Volume:5 Page:1183-1188
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Zhou Kuan-Ju¹,Chang Ting-Chang¹^ORCID,Tai Mao-Chou²,Chen Yu-An¹,Chien Ya-Ting³,Sun Pei-Jun³,Yen Po-Yu¹,Sze Simon M.⁴,Fan Yang-Shun⁵,Huang Chen-Shuo⁵,Chen Kuo-Kuang⁵,Tsai Chih-Hung⁵

Affiliation:

1. Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan

2. Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan

3. Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 804, Taiwan

4. Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan

5. Advanced Process Research Division, AUO Corporation, Hsinchu 300, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01629

Reference34 articles.

1. 8.3:Invited Paper: Advantages of IGZO Oxide Semiconductor

2. A Novel a-InGaZnO TFT Pixel Circuit for AMOLED Display With the Enhanced Reliability and Aperture Ratio

3. High-Performance Flexible a-IGZO TFTs Adopting Stacked Electrodes and Transparent Polyimide-Based Nanocomposite Substrates

4. High performance, transparent a-IGZO TFTs on a flexible thin glass substrate

5. Low‐Temperature Polysilicon Oxide Thin‐Film Transistors with Coplanar Structure Using Six Photomask Steps Demonstrating High Inverter Gain of 264 V V −1

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