Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-Based Magnetic Tunnel Junctions-Reference-Cited by-同舟云学术

Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-Based Magnetic Tunnel Junctions

Published:2023-03-06 Issue:3 Volume:5 Page:1471-1477
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Jha Neha¹^ORCID,Pariyar Anand²^ORCID,Parvini Tahereh Sadat¹,Denker Christian¹,Vardhanapu Pavan K.³,Vijaykumar Gonela³^ORCID,Ahrens Arne⁴,Meyer Tobias⁴^ORCID,Seibt Michael⁴,Atodiresei Nicolae⁵,Moodera Jagadeesh S.⁶,Mandal Swadhin K.³^ORCID,Münzenberg Markus¹

Affiliation:

1. Institut für Physik─Universität Greifswald, Felix-Hausdorff-Straße 6, Greifswald 17489, Germany

2. Department of Chemistry, School of Physical Sciences, Sikkim University, Tadong, Gangtok 737102, India

3. Department of Chemical Sciences, Indian Institute of Science Education and Research (IISER), Kolkata 741246, India

4. IV. Physikalisches Institute, Georg-August-Universitat Göttingen, Friedrich-Hund-Platz 1, Göttingen 37077, Germany

5. Peter Grünberg Institute and Institute for Advanced Simulation, Forschungszentrum Jülich, Wilhelm-Johnen-Straße, Jülich 52428, Germany

6. Francis Bitter Magnet Laboratory, Plasma Science and Fusion Center and Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

Funder

Army Research Office

Deutsche Forschungsgemeinschaft

Ministerium f?r Bildung, Wissenschaft und Kultur Mecklenburg-Vorpommern

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01428

Reference65 articles.