Monitoring the Temperature of a Mo/Si Mirror with Photoluminescence in Extreme-Ultraviolet Lithography-Reference-Cited by-同舟云学术

Monitoring the Temperature of a Mo/Si Mirror with Photoluminescence in Extreme-Ultraviolet Lithography

Published:2022-07-13 Issue:7 Volume:4 Page:3435-3439
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Lo Jen-Iu¹,Peng Yu-Chain¹,Lu Hsiao-Chi¹^ORCID,Tseng Ton-Rong²,Cheng Bing-Ming¹³^ORCID

Affiliation:

1. Department of Medical Research, Hualien Tzu Chi Hospital, Buddhist Tzu Chi Medical Foundation, No. 707, Sec. 3, Chung-Yang Road, Hualien City 970, Taiwan

2. Mastek Technologies, Inc., 4F-4, No. 13, Wuquan first Road, Xinzhuang, New Taipei City 24892, Taiwan

3. Tzu-Chi University of Science and Technology, No. 880, Sec. 2, Chien-kuo Road, Hualien City 970, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c00347

Reference32 articles.

1. Light sources for high-volume manufacturing EUV lithography: technology, performance, and power scaling

2. Laser-Produced Plasma Sources for High-Volume-Manufacturing EUV Lithography

3. EUV Photoresists: A Progress Report and Future Prospects

4. On device EPE: minimizing overlay, pattern placement, and pitch-walk, in presence of EUV stochastics and etch variations (Conference Presentation)

5. A Reliability Enhanced 5nm CMOS Technology Featuring 5th Generation FinFET with Fully-Developed EUV and High Mobility Channel for Mobile SoC and High Performance Computing Application

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