Author:
Fomenkov Igor,Brandt David,Ershov Alex,Schafgans Alexander,Tao Yezheng,Vaschenko Georgiy,Rokitski Slava,Kats Michael,Vargas Michael,Purvis Michael,Rafac Rob,La Fontaine Bruno,De Dea Silvia,LaForge Andrew,Stewart Jayson,Chang Steven,Graham Matthew,Riggs Daniel,Taylor Ted,Abraham Mathew,Brown Daniel
Abstract
AbstractExtreme ultraviolet (EUV) lithography is expected to succeed in 193-nm immersion multi-patterning technology for sub-10-nm critical layer patterning. In order to be successful, EUV lithography has to demonstrate that it can satisfy the industry requirements in the following critical areas: power, dose stability, etendue, spectral content, and lifetime. Currently, development of second-generation laser-produced plasma (LPP) light sources for the ASML’s NXE:3300B EUV scanner is complete, and first units are installed and operational at chipmaker customers. We describe different aspects and performance characteristics of the sources, dose stability results, power scaling, and availability data for EUV sources and also report new development results.
Subject
Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Cited by
89 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献