Enhanced Synaptic Characteristics under Applied Magnetic Field in V<sub>2</sub>O<sub>5</sub>/NiMnIn-Based Switching Device for Neuromorphic Computing-Reference-Cited by-同舟云学术

Enhanced Synaptic Characteristics under Applied Magnetic Field in V₂O₅/NiMnIn-Based Switching Device for Neuromorphic Computing

Published:2023-06-14 Issue:6 Volume:5 Page:3362-3372
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Kaushlendra Kumar¹^ORCID,Kaur Davinder¹^ORCID

Affiliation:

1. Functional Nanomaterials Research Laboratory (FNRL), Department of Physics and Centre for Nanotechnology, Indian Institute of Technology Roorkee, Roorkee 247667, Uttarakhand, India

Funder

Science and Engineering Research Board

Shastri Indo-Canadian Institute

Defence Research and Development Organisation

Ministry of Education, India

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00387

Reference62 articles.

1. Memristive Artificial Synapses for Neuromorphic Computing

2. Memory Devices for Flexible and Neuromorphic Device Applications

3. Electroforming-free nonvolatile resistive switching of redox-exfoliated MoS2 nanoflakes loaded polystyrene thin film with synaptic functionality

4. Review of Semiconductor Flash Memory Devices for Material and Process Issues

5. Improved gradual resistive switching range and 1000× on/off ratio in HfO_x RRAM achieved with a Ge₂Sb₂Te₅ thermal barrier

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