Film-Nanostructure-Controlled Inerasable-to-Erasable Switching Transition in ZnO-Based Transparent Memristor Devices: Sputtering-Pressure Dependency-Reference-Cited by-同舟云学术

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Film-Nanostructure-Controlled Inerasable-to-Erasable Switching Transition in ZnO-Based Transparent Memristor Devices: Sputtering-Pressure Dependency

Published:2019-10-31 Issue:11 Volume:1 Page:2184-2189
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Simanjuntak Firman Mangasa^ORCID,Ohno Takeo¹,Samukawa Seiji

Affiliation:

1. Department of Innovative Engineering, Oita University, Oita 870-1192, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Advanced Institute for Materials Research,Tohoku University

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00617

Reference30 articles.

1. Invisible circuits

2. Status and Prospects of ZnO-Based Resistive Switching Memory Devices

3. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

4. Growth, dielectric properties, and memory device applications of ZrO2 thin films

5. Resistive switching characteristics of nickel silicide layer embedded HfO2 film

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1. Influence of Fabrication Modes on Magnetron-Sputtered ZrO₂-Based Memristors’ Properties;2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM);2024-06-28

2. Barium oxide write-once read-many-times memory with a high resistance window;Journal of Materials Chemistry C;2024

3. Promising Materials and Synthesis Methods for Resistive Switching Memory Devices: A Status Review;ACS Applied Electronic Materials;2023-04-21

4. Perovskite-based emerging memories;Perovskite Ceramics;2023

5. Annealing induced cation diffusion in TaO_x-based memristor and its compatibility for back-end-of-line post-processing;Applied Physics Letters;2022-12-05

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