Efficient Dislocation Prevention and Thermal Transport Network Constructed by CNT Films on PSS for GaN-Based UV LEDs-Reference-Cited by-同舟云学术

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Efficient Dislocation Prevention and Thermal Transport Network Constructed by CNT Films on PSS for GaN-Based UV LEDs

Published:2021-10-28 Issue:11 Volume:3 Page:4905-4911
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Wang Kun¹,Tian Yucheng¹^ORCID,Li Mengda¹,Zhang Huangshu¹,Chen Zhizhong¹,Wei Yang²^ORCID,Yu Tongjun¹

Affiliation:

1. State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P. R. China

2. Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, P. R. China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Key-Area Research and Development Program of Guangdong Province

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00736

Reference31 articles.

1. III-nitride blue and ultraviolet photonic crystal light emitting diodes

2. Investigation of the temperature dependent efficiency droop in UV LEDs

3. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

4. Defect effect on the performance of nonpolar GaN-based ultraviolet photodetectors

5. Advances in group III-nitride-based deep UV light-emitting diode technology

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