Effect of the Gate Dielectric Layer of Flexible InGaZnO Synaptic Thin-Film Transistors on Learning Behavior
Author:
Affiliation:
1. School of Electrical Engineering and Circadian ICT Research Center, Kookmin University, Seoul 02707, Korea
2. Department of Electronic Engineering, Inha University, Incheon 22212, Korea
Funder
Ministry of Education
National Research Foundation of Korea
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00517
Reference53 articles.
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