Decorated Dislocations against Phonon Propagation for Thermal Management-Reference-Cited by-同舟云学术

Decorated Dislocations against Phonon Propagation for Thermal Management

Published:2020-02-25 Issue:3 Volume:3 Page:2682-2694
ISSN:2574-0962
Container-title:ACS Applied Energy Materials
language:en
Short-container-title:ACS Appl. Energy Mater.

Author:

Giaremis Stefanos¹^ORCID,Kioseoglou Joseph¹^ORCID,Desmarchelier Paul²³,Tanguy Anne³,Isaiev Mykola⁴,Belabbas Imad⁵^ORCID,Komninou Philomela¹,Termentzidis Konstantinos²

Affiliation:

1. Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece

2. Université de Lyon, CNRS, INSA-Lyon, Université Claude Bernard Lyon 1, CETHIL UMR5008, F-69621 Villeurbanne, France

3. LaMCoS, Université de Lyon, INSA Lyon, CNRS UMR 5259, Bat. Jacquard, 27 Avenue Jean Capelle, F-69621 Villeurbanne Cedex, France

4. Université de Lorraine, LEMTA, CNRS-UMR7563, BP 70239, 54506 Vandœuvre Cedex, France

5. Equipe de Cristallographie et de Simulation des Matériaux, Laboratoire de Physico-Chimie des Matériaux et Catalyse, Faculté des Sciences Exactes, Université de Bejaia 06000 Béjaı̈a, Algeria

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaem.9b02368

Reference69 articles.

1. Thermal Transport Along the Dislocation Line in Silicon Carbide

2. Thermally-Active Screw Dislocations in Si Nanowires and Nanotubes

3. Nanowires with dislocations for ultralow lattice thermal conductivity

4. Impact of screw and edge dislocations on the thermal conductivity of individual nanowires and bulk GaN: a molecular dynamics study

5. Phonon Scattering by Dislocations in GaN

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