Impact of screw and edge dislocations on the thermal conductivity of individual nanowires and bulk GaN: a molecular dynamics study-Reference-Cited by-同舟云学术

Impact of screw and edge dislocations on the thermal conductivity of individual nanowires and bulk GaN: a molecular dynamics study

Published:2018 Issue:7 Volume:20 Page:5159-5172
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Termentzidis Konstantinos¹²³⁴⁵^ORCID,Isaiev Mykola¹⁶⁷⁸⁵,Salnikova Anastasiia⁹¹⁰¹¹,Belabbas Imad¹²¹³¹⁴,Lacroix David¹⁶⁷⁸⁵,Kioseoglou Joseph¹⁵¹⁶¹⁷¹⁸

Affiliation:

1. CNRS

2. CETHIL

3. UMR 5008

4. 69100 Villeurbanne

5. France

6. LEMTA

7. UMR 7563

8. 54504 Vandoeuvre les Nancy

9. Taras Shevchenko National University of Kyiv

10. City of Kyiv

11. Ukraine

12. Laboratoire de Physico-Chimie des Matériaux et Catalyse

13. Bejaïa

14. Algeria

15. Department of Physics

16. Aristotle University of Thessaloniki

17. GR-54124 Thessaloniki

18. Greece

Abstract

The thermal transport properties of nanowires and bulk GaN in the presence of different dislocations using molecular dynamics simulations are reported.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CP/C7CP07821H

Reference73 articles.

1. GaN nanowire lasers with low lasing thresholds

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4. Modeling the reduction of thermal conductivity in core/shell and diameter-modulated silicon nanowires

5. Modulated SiC nanowires: Molecular dynamics study of their thermal properties

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