Short-Term Synaptic Plasticity Regulation in Solution-Gated Indium–Gallium–Zinc-Oxide Electric-Double-Layer Transistors-Reference-Cited by-同舟云学术

Short-Term Synaptic Plasticity Regulation in Solution-Gated Indium–Gallium–Zinc-Oxide Electric-Double-Layer Transistors

Published:2016-04-06 Issue:15 Volume:8 Page:9762-9768
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Wan Chang Jin¹²,Liu Yang Hui²,Zhu Li Qiang²,Feng Ping¹,Shi Yi¹,Wan Qing¹²

Affiliation:

1. School of Electronic Science & Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

2. Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.5b12726

Reference30 articles.

1. Gated proton transport in aligned mesoporous silica films

2. The electrochemical impact on electrostatic modulation of the metal-insulator transition in nickelates

3. Insulator-to-metal transition in ZnO by electric double layer gating

4. Electrostatic and Electrochemical Nature of Liquid-Gated Electric-Double-Layer Transistors Based on Oxide Semiconductors

5. Schmitt Trigger Using a Self-Healing Ionic Liquid Gated Transistor

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