Device Engineering of Dual Metal Gate-Based Artificial Synapse for Enhanced Plasticity Utilizing Al₂O₃-Based Ion Conducting Electrolyte-Reference-Cited by-同舟云学术

Device Engineering of Dual Metal Gate-Based Artificial Synapse for Enhanced Plasticity Utilizing Al₂O₃-Based Ion Conducting Electrolyte

Published:2024-04 Issue:4 Volume:71 Page:2749-2754
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Bhadra Reetwik¹^ORCID,Kumar Ramesh²,Kumar Amitesh³^ORCID

Affiliation:

1. Department of Electrical Engineering, and the Department of Electrical and Engineering, Nextgen Adaptive Systems Group, National Institute of Technology Patna, Patna, India

2. Department of Electrical and Engineering, National Institute of Technology Patna, Patna, India

3. Department of Electrical Engineering, Nextgen Adaptive Systems Group, National Institute of Technology Patna, Patna, India

Funder

Department of Science and Technology (DST), Government of India has aided the work under Department of Science and Technology (DST) Science and Engineering Research Board (SERB) Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10482422/10445024.pdf?arnumber=10445024

Reference33 articles.

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4. Neuromorphic Simulation of Proton Conductors Laterally Coupled Oxide-Based Transistors With Multiple in-Plane Gates

5. IGZO/CsPbBr3-Nanoparticles/IGZO Neuromorphic Phototransistors and Their Optoelectronic Coupling Applications