N-MOSFETs Formed on Solid Phase Epitaxially Grown GeSn Film with Passivation by Oxygen Plasma Featuring High Mobility-Reference-Cited by-同舟云学术

N-MOSFETs Formed on Solid Phase Epitaxially Grown GeSn Film with Passivation by Oxygen Plasma Featuring High Mobility

Published:2015-11-24 Issue:48 Volume:7 Page:26374-26380
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Fang Yung-Chin¹,Chen Kuen-Yi¹,Hsieh Ching-Heng¹,Su Chang-Chia¹,Wu Yung-Hsien¹

Affiliation:

1. Department of Engineering and System Science, National Tsing Hua University, 300 Hsinchu, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.5b08518

Reference31 articles.

1. Hole Mobility Enhancement in Compressively Strained ${\rm Ge}_{0.93}{\rm Sn}_{0.07}$ pMOSFETs

2. GeSn channel nMOSFETs: Material potential and technological outlook

3. (Invited) GeSn Channel n and p MOSFETs

4. Guo, P.; Zhan, C.; Yang, Y.; Gong, X.; Liu, B.; Cheng, R.; Wang, W.; Pan, J.; Zhang, Z.; Tok, E. S.; Han, G.; Yeo, Y. C.Germanium-Tin (GeSn) N-Channel MOSFETs with Low Temperature Silicon Surface Passivation. InInternational Symposium on VLSI Technology Systems and Applications (VLSI-TSA);Hsinchu, Taiwan, April 22–-24, 2013;IEEE:Piscataway, NJ, 2013; Vol.75, pp1–2.

5. Towards high mobility GeSn channel nMOSFETs: Improved surface passivation using novel ozone oxidation method

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