Effect of Ionic Conductivity on Response Speed of SrTiO3-Based All-Solid-State Electric-Double-Layer Transistor-Reference-Cited by-同舟云学术

Effect of Ionic Conductivity on Response Speed of SrTiO3-Based All-Solid-State Electric-Double-Layer Transistor

Published:2015-05-29 Issue:22 Volume:7 Page:12254-12260
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Tsuchiya Takashi¹,Ochi Masanori²,Higuchi Tohru²,Terabe Kazuya¹,Aono Masakazu¹

Affiliation:

1. International Center for Materials Nanoarchitechtonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

2. Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1, Niijuku, Katsushika-ku, Tokyo 125-8585, Japan

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.5b02998

Reference34 articles.

1. Gate Dielectrics for Organic Field-Effect Transistors: New Opportunities for Organic Electronics

2. Electric-field-induced superconductivity in an insulator

3. Liquid-gated interface superconductivity on an atomically flat film

4. High-Density Carrier Accumulation in ZnO Field-Effect Transistors Gated by Electric Double Layers of Ionic Liquids

5. Electrostatic and Electrochemical Nature of Liquid-Gated Electric-Double-Layer Transistors Based on Oxide Semiconductors

Cited by 40 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrolyte gating using ionic crystals: demonstration of iontronics with ionic crystals;Applied Physics Express;2024-07-01

2. Electric double layer effect in the vicinity of solid electrolyte/diamond interfaces and the application to neuromorphic computing;Journal of Solid State Electrochemistry;2024-05-28

3. Asymmetric transition of electrical resistance in an all-solid-state redox device with Fe₃O₄ and Li-ion electrolyte thin films for physical reservoir computing;Japanese Journal of Applied Physics;2024-02-12

4. A Redox‐Based Ion‐Gating Reservoir, Utilizing Double Reservoir States in Drain and Gate Nonlinear Responses;Advanced Intelligent Systems;2023-06-29

5. Ultrafast-switching of an all-solid-state electric double layer transistor with a porous yttria-stabilized zirconia proton conductor and the application to neuromorphic computing;Materials Today Advances;2023-06