Metal Filament Growth in Electrically Conductive Polymers for Nonvolatile Memory Application-Reference-Cited by-同舟云学术

Metal Filament Growth in Electrically Conductive Polymers for Nonvolatile Memory Application

Published:2006-11-01 Issue:47 Volume:110 Page:23812-23816
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Joo Won-Jae¹,Choi Tae-Lim¹,Lee Jaeho¹,Lee Sang Kyun¹,Jung Myung-Sup¹,Kim Nakjoong¹,Kim Jong Min¹

Affiliation:

1. Materials Center, Samsung Advanced Institute of Technology, P. O. Box 111, Suwon 440-600, Korea, Electronic Chemical Materials Division, Cheil Industries Inc., 332-2 Gocheon-dong, Uiwang-si, Gyeonggi-do, Korea, and Department of Chemistry, Hanyang University, Seoul 133-791, Korea

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp0649899

Reference25 articles.

1. A polymer/semiconductor write-once read-many-times memory

2. Organic Reversible Switching Devices for Memory Applications

3. Is There an Immortal Memory?

4. Memory Effect and Negative Differential Resistance by Electrode- Induced Two-Dimensional Single- Electron Tunneling in Molecular and Organic Electronic Devices

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