Memory Effect and Negative Differential Resistance by Electrode- Induced Two-Dimensional Single- Electron Tunneling in Molecular and Organic Electronic Devices-Reference-Cited by-同舟云学术

Memory Effect and Negative Differential Resistance by Electrode- Induced Two-Dimensional Single- Electron Tunneling in Molecular and Organic Electronic Devices

Published:2005-10-04 Issue:19 Volume:17 Page:2307-2311
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Tang W.,Shi H. Z.,Xu G.,Ong B. S.,Popovic Z. D.,Deng J. C.,Zhao J.,Rao G. H.

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

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1. Coulomb blockade and the Kondo effect in single-atom transistors

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4. A single-electron transistor made from a cadmium selenide nanocrystal

5. Reproducible Measurement of Single-Molecule Conductivity

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