Nanoscale Characterization of TiO2 Films Grown by Atomic Layer Deposition on RuO2 Electrodes-Reference-Cited by-同舟云学术

Nanoscale Characterization of TiO2 Films Grown by Atomic Layer Deposition on RuO2 Electrodes

Published:2014-02-10 Issue:4 Volume:6 Page:2486-2492
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Murakami Katsuhisa¹,Rommel Mathias²,Hudec Boris³,Rosová Alica³,Hušeková Kristína³,Dobročka Edmund³,Rammula Raul⁴,Kasikov Aarne⁴,Han Jeong Hwan⁵,Lee Woongkyu⁵,Song Seul Ji⁵,Paskaleva Albena⁶,Bauer Anton J.²,Frey Lothar¹²,Fröhlich Karol³,Aarik Jaan⁴,Hwang Cheol Seong⁵

Affiliation:

1. Chair of Electron Devices, University of Erlangen-Nuremberg, Cauerstrasse 6, 91058 Erlangen, Germany

2. Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen, Germany

3. Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská Cesta 9, 84104 Bratislava, Slovakia

4. Institute of Physics, University of Tartu, Riia 142, 51014 Tartu, Estonia

5. Department of Materials Science and Engineering, and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Republic of Korea

6. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia, Bulgaria

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am4049139

Reference38 articles.

1. Growth of High-Dielectric-Constant TiO[sub 2] Films in Capacitors with RuO[sub 2] Electrodes

2. Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory

3. Role of Interfacial Reaction in Atomic Layer Deposition of TiO2 Thin Films Using Ti(O-iPr)2(tmhd)2 on Ru or RuO2 Substrates

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