Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates-Reference-Cited by-同舟云学术

Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates

Published:2013-09-23 Issue:10 Volume:7 Page:9106-9114
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Kim Kyung-Ho¹,Um Doo-Seung²,Lee Hochan²,Lim Seongdong²,Chang Joonyeon¹,Koo Hyun Cheol¹³,Oh Min-Wook⁴,Ko Hyunhyub²,Kim Hyung-jun¹

Affiliation:

1. Spin Convergence Research Center, Korea Institute of Science and Technology (KIST), Seoul 136-791, Korea

2. School of Nano-Bioscience and Chemical Engineering, KIER-UNIST Advanced Center for Energy, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Korea

3. KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 136-701, Korea

4. Creative Electrotechnology Research Center, Korea Electrotechnology Research Institute, Changwon 642-120, Korea

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn403715p

Reference47 articles.

1. Spintronics: Fundamentals and applications

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3. Control of Spin Precession in a Spin-Injected Field Effect Transistor

4. Gate control of spin dynamics in III-V semiconductor quantum dots

5. Improving the mobility of an In0.52Al0.48As/In0.53Ga0.47As inverted modulation‐doped structure by inserting a strained InAs quantum well

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