High-Resolution Field Effect Sensing of Ferroelectric Charges-Reference-Cited by-同舟云学术

High-Resolution Field Effect Sensing of Ferroelectric Charges

Published:2011-03-04 Issue:4 Volume:11 Page:1428-1433
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Ko Hyoungsoo¹²,Ryu Kyunghee³,Park Hongsik¹⁴,Park Chulmin¹²,Jeon Daeyoung¹⁵,Kim Yong Kwan¹²,Jung Juhwan¹²,Min Dong-Ki¹²,Kim Yunseok⁶,Lee Ho Nyung⁷,Park Yoondong¹²,Shin Hyunjung³,Hong Seungbum¹⁸

Affiliation:

1. Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin 446-712, Korea

2. Semiconductor R&D center, Samsung Electronics, Yongin 446-711, Korea

3. School of Advanced Materials Engineering, Kookmin University, Seoul 136-702, Korea

4. Division of Engineering, Brown University, Providence, Rhode Island 02912, United States

5. School of Electrical Engineering, Korea University, Seoul 136-713, Korea

6. Max Planck Institute of Microstructure Physics, Halle (Saale) 06120, Germany

7. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States

8. Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl103372a

Reference31 articles.

1. Kelvin probe force microscopy

2. Nanoscale Magnetic Domains in Mesoscopic Magnets

3. Chemical identification of individual surface atoms by atomic force microscopy

4. Deterministic control of ferroelastic switching in multiferroic materials

5. SCANNING THERMAL MICROSCOPY

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