Kinetics of Metal Organic−Ammonia Adduct Decomposition: Implications for Group-III Nitride MOCVD
Author:
Affiliation:
1. Sandia National Laboratories, P.O. Box 5800, MS-0601, Albuquerque, New Mexico 87185
Publisher
American Chemical Society (ACS)
Subject
Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/jp054380s
Reference52 articles.
1. Growth of Group III Nitrides. A Review of Precursors and Techniques
2. OMVPE growth and gas-phase reactions of AlGaN for UV emitters
3. The influence of TMA and SiH4 on the incorporation rate of Ga in AlxGa1−xN crystals grown from TMG and NH3
4. A study of parasitic reactions between NH3 and TMGa or TMAI
5. AlN and AlGaN growth using low-pressure metalorganic chemical vapor deposition
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