AlN and AlGaN growth using low-pressure metalorganic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. A study of parasitic reactions between NH3 and TMGa or TMAI
2. Growth of High-Quality AlN, GaN and AlGaN with Atomically Smooth Surfaces on Sapphire Substrates
3. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
4. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
5. 0.12-μm gate III-V nitride HFET's with high contact resistances
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4. Behaviours of the lattice-polarity inversion in AlN growth on c-Al2O3 (0001) substrates by ammonia-free high temperature metalorganic chemical vapor deposition;CrystEngComm;2022
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