Etching of GaAs(100) with Aqueous Ammonia Solution: A Synchrotron-Photoemission Spectroscopy Study-Reference-Cited by-同舟云学术

Etching of GaAs(100) with Aqueous Ammonia Solution: A Synchrotron-Photoemission Spectroscopy Study

Published:2010-11-11 Issue:49 Volume:114 Page:21385-21389
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Lebedev Mikhail V.¹,Mankel Eric¹,Mayer Thomas¹,Jaegermann Wolfram¹

Affiliation:

1. A. F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg, 194021, Russia and Institute of Material Science, Darmstadt University of Technology, Petersenstrasse 32, 64287 Darmstadt, Germany

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp104321e

Reference21 articles.

1. Simplified Surface Preparation for GaAs Passivation Using Atomic Layer-Deposited High- $\kappa$ Dielectrics

2. Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2O3 gate dielectric

3. Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators

4. Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

5. Synchrotron photoemission spectroscopy study of ammonium hydroxide etching to prepare well-ordered GaAs(1 0 0) surfaces

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