Atomic-Scale Mapping of Layer-by-Layer Hydrogen Etching and Passivation of SiC(0001) Substrates-Reference-Cited by-同舟云学术

Atomic-Scale Mapping of Layer-by-Layer Hydrogen Etching and Passivation of SiC(0001) Substrates

Published:2016-05-09 Issue:19 Volume:120 Page:10361-10367
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Glass Stefan¹,Reis Felix¹,Bauernfeind Maximilian¹,Aulbach Julian¹,Scholz Markus R.¹,Adler Florian¹,Dudy Lenart¹,Li Gang²³,Claessen Ralph¹,Schäfer Jörg¹

Affiliation:

1. Physikalisches Institut and Röntgen Research Center for Complex Material Systems, Universität Würzburg, 97074 Würzburg, Germany

2. Institut für Theoretische Physik und Astrophysik, Universität Würzburg, 97074 Würzburg, Germany

3. Institut für Festkörperphysik, Technische Universität Wien, 1040 Wien, Austria

Funder

European Research Council

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.6b01493

Reference36 articles.

1. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

2. The quasi-free-standing nature of graphene on H-saturated SiC(0001)

3. Large-Area and High-Quality Epitaxial Graphene on Off-Axis SiC Wafers

4. GaN grown on hydrogen plasma cleaned 6H‐SiC substrates

5. Silicene on Substrates: A Way To Preserve or Tune Its Electronic Properties

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