Sources of n-Type Conductivity in Single Crystal β-Ga2O3 and Monoclinic WO3 Nanoparticles
Author:
Affiliation:
1. School of Materials, Sun Yat-sen University, Shenzhen 518107, Guangdong, China
2. State Key Laboratory of Crystal Materials & Key Laboratory of Functional Crystal Materials and Device, Shandong University, Jinan 250100, Shandong, China
Funder
National Natural Science Foundation of China
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.3c00733
Reference28 articles.
1. Role of self-trapping in luminescence andp-type conductivity of wide-band-gap oxides
2. A review of Ga2O3materials, processing, and devices
3. Tungsten trioxide as a photoanode for a photoelectrochemical cell (PEC)
4. A Review on the Properties and Applications of WO3 Nanostructure−Based Optical and Electronic Devices
5. Understanding the Potential of WO3 Based Sensors for Breath Analysis
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1. Spontaneous Donor Defects and Voltage–Assisted Hole Doping in Beta-Gallium Oxides under Multiple Epitaxy Conditions;2023-11-08
2. On the nature of majority and minority traps in β-Ga2O3: A review;Materials Today Physics;2023-08
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