Thermal Conductivity Comparison of Indium Gallium Zinc Oxide Thin Films: Dependence on Temperature, Crystallinity, and Porosity-Reference-Cited by-同舟云学术

Thermal Conductivity Comparison of Indium Gallium Zinc Oxide Thin Films: Dependence on Temperature, Crystallinity, and Porosity

Published:2016-03-30 Issue:14 Volume:120 Page:7467-7475
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Cui Boya,Zeng Li,Keane Denis¹,Bedzyk Michael J.,Buchholz D. Bruce,Chang Robert P. H.,Yu Xinge,Smith Jeremy,Marks Tobin J.,Xia Yu²,Facchetti Antonio F.²,Medvedeva Julia E.³,Grayson M.

Affiliation:

1. Northwestern Synchrotron Research Center, Argonne, Illinois 60439, United States

2. Polyera Corporation, Skokie, Illinois 60077, United States

3. Department of Physics, Missouri University of Science and Technology, Rolla, Missouri 65409, United States

Funder

Division of Materials Research

Argonne National Laboratory, Office of Science

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.5b12105

Reference63 articles.

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4. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

5. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

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