Role of the Deposition Precursor Molecules in Defining Oxidation State of Deposited Copper in Surface Reduction Reactions on H-Terminated Si(111) Surface-Reference-Cited by-同舟云学术

Role of the Deposition Precursor Molecules in Defining Oxidation State of Deposited Copper in Surface Reduction Reactions on H-Terminated Si(111) Surface

Published:2015-11-18 Issue:48 Volume:119 Page:27018-27027
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Duan Yichen¹,Gao Fei¹,Teplyakov Andrew V.¹

Affiliation:

1. Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716, United States

Funder

Division of Chemistry

American Chemical Society Petroleum Research Fund

National Institute of General Medical Sciences

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.5b08287

Reference51 articles.

1. Copper metallization for ULSL and beyond

2. Advanced multilayer metallization schemes with copper as interconnection metal

3. Copper interconnections and reliability

4. Damascene copper electroplating for chip interconnections

5. Recent advances in catalytic hydrogenation of carbon dioxide

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